TFN807 Specs and Replacement
Type Designator: TFN807
SMD Transistor Code: 9F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
TFN807 Substitution
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TFN807 datasheet
Tin Far Electronic CO.,LTD Page No 1/4 TFN807 Description The TFN807 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. Low V CE(sat) High switching speed. Complementary to BC817N3 Equivalent Circuit Outline TFN807 SOT-23 B Base ... See More ⇒
Detailed specifications: TS13003CT, TS13003HVCT, TS13003MVCT, TS13005CI, TS13005CZ, TS13007BCZ, TS13009CZ, TFN5177, C5198, TFN817, TFN847, TFNA06, TFNA14, TFNH10, TG50, TG51, TG52
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