TFN807 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN807
SMD Transistor Code: 9F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
TFN807 Transistor Equivalent Substitute - Cross-Reference Search
TFN807 Datasheet (PDF)
..1. Size:450K tinfar
tfn807.pdf
tfn807.pdf
Tin Far Electronic CO.,LTD Page No: 1/4 TFN807 Description The TFN807 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. Low VCE(sat) High switching speed. Complementary to BC817N3 Equivalent Circuit OutlineTFN807 SOT-23BBase
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
