TFN847 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN847
SMD Transistor Code: 1E_1F_1G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT23
TFN847 Transistor Equivalent Substitute - Cross-Reference Search
TFN847 Datasheet (PDF)
..1. Size:309K tinfar
tfn847.pdf
tfn847.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN847 Description The TFN847 is designed for general purpose switching and amplification applications. Complementary to TFN857. Pb-free package Features Low current, I =100mAC(max) Low voltage, BV = 45V.CEO Symbol Outline TFN847 SOT-23BBaseCCollectorEEmitterAbsolute Maximum Ratings (Ta=25C)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
