TFN847 Specs and Replacement
Type Designator: TFN847
SMD Transistor Code: 1E_1F_1G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: SOT23
TFN847 Substitution
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TFN847 datasheet
Tin Far Electronic CO.,LTD Page No 1/6 TFN847 Description The TFN847 is designed for general purpose switching and amplification applications. Complementary to TFN857. Pb-free package Features Low current, I =100mA C(max) Low voltage, BV = 45V. CEO Symbol Outline TFN847 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) ... See More ⇒
Detailed specifications: TS13003MVCT, TS13005CI, TS13005CZ, TS13007BCZ, TS13009CZ, TFN5177, TFN807, TFN817, S8050, TFNA06, TFNA14, TFNH10, TG50, TG51, TG52, TG53, TG55
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