TFNH10 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFNH10
SMD Transistor Code: 3E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Noise Figure, dB: -
Package: SOT23
TFNH10 Transistor Equivalent Substitute - Cross-Reference Search
TFNH10 Datasheet (PDF)
..1. Size:234K tinfar
tfnh10.pdf
tfnh10.pdf
Tin Far Electronic CO.,LTDPage No: 1/4TFNH10 Description The TFNH10 is designed for using in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. ( fT = 1.0GHz, T . @ V =10V, IC=10mA, f=200MHz )YP CB Very low capacitance. ( Cob = 1.4 pF , T . @ V =10V, f=1MHz )YP CB Small rbb-Cc and high gain. ( rbb-Cc = 8ps ,
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
