TFNH10 Specs and Replacement
Type Designator: TFNH10
SMD Transistor Code: 3E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Package: SOT23
TFNH10 Substitution
- BJT ⓘ Cross-Reference Search
TFNH10 datasheet
Tin Far Electronic CO.,LTD Page No 1/4 TFNH10 Description The TFNH10 is designed for using in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. ( fT = 1.0GHz, T . @ V =10V, IC=10mA, f=200MHz ) YP CB Very low capacitance. ( Cob = 1.4 pF , T . @ V =10V, f=1MHz ) YP CB Small rbb -Cc and high gain. ( rbb -Cc = 8ps ,... See More ⇒
Detailed specifications: TS13007BCZ , TS13009CZ , TFN5177 , TFN807 , TFN817 , TFN847 , TFNA06 , TFNA14 , A1015 , TG50 , TG51 , TG52 , TG53 , TG55 , TH430 , TH513 , TH560 .
Keywords - TFNH10 pdf specs
TFNH10 cross reference
TFNH10 equivalent finder
TFNH10 pdf lookup
TFNH10 substitution
TFNH10 replacement
