TFNH10 Transistor. Datasheet pdf. Equivalent
Type Designator: TFNH10
Marking Code: 3E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Noise Figure, dB: -
Package: SOT23
TFNH10 Transistor Equivalent Substitute - Cross-Reference Search
TFNH10 Datasheet (PDF)
1.1. tfnh10.pdf 
Size:234K _update
Tin Far Electronic CO.,LTD Page No: 1/4 TFNH10 Description The TFNH10 is designed for using in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features • High transition frequency. ( fT = 1.0GHz, T . @ V =10V, IC=10mA, f=200MHz ) YP CB • Very low capacitance. ( Cob = 1.4 pF , T . @ V =10V, f=1MHz ) YP CB • Small rbb’-Cc and high gain. ( rbb’-Cc = 8ps ,
Datasheet: TS13007BCZ , TS13009CZ , TFN5177 , TFN807 , TFN817 , TFN847 , TFNA06 , TFNA14 , S8550 , TG50 , TG51 , TG52 , TG53 , TG55 , TH430 , TH513 , TH560 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |