TG51 Specs and Replacement

Type Designator: TG51

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.175 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO18

 TG51 Substitution

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TG51 datasheet

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TG51

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Detailed specifications: TFN5177, TFN807, TFN817, TFN847, TFNA06, TFNA14, TFNH10, TG50, BD140, TG52, TG53, TG55, TH430, TH513, TH560, TH562, THA15

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