TG52 Transistor. Datasheet pdf. Equivalent
Type Designator: TG52
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO18
TG52 Transistor Equivalent Substitute - Cross-Reference Search
TG52 Datasheet (PDF)
1.1. tg50_tg51_tg52_tg53_tg55.pdf 
Size:235K _update
Datasheet: TFN807 , TFN817 , TFN847 , TFNA06 , TFNA14 , TFNH10 , TG50 , TG51 , 2SC5200 , TG53 , TG55 , TH430 , TH513 , TH560 , TH562 , THA15 , THA42TTD03 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |