TG52 Specs and Replacement
Type Designator: TG52
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO18
TG52 Substitution
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TG52 datasheet
Detailed specifications: TFN807 , TFN817 , TFN847 , TFNA06 , TFNA14 , TFNH10 , TG50 , TG51 , TIP3055 , TG53 , TG55 , TH430 , TH513 , TH560 , TH562 , THA15 , THA42TTD03 .
Keywords - TG52 pdf specs
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