TG55 Specs and Replacement

Type Designator: TG55

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.175 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

 TG55 Substitution

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TG55 datasheet

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TG55

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Detailed specifications: TFN847, TFNA06, TFNA14, TFNH10, TG50, TG51, TG52, TG53, BC557, TH430, TH513, TH560, TH562, THA15, THA42TTD03, THA92TTD03, TIP110A

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