TH513 Datasheet, Equivalent, Cross Reference Search
Type Designator: TH513
SMD Transistor Code: TH513
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 127 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 19
Noise Figure, dB: -
Package: SOT120
TH513 Transistor Equivalent Substitute - Cross-Reference Search
TH513 Datasheet (PDF)
sd1733 th513.pdf
SD1733 (TH513)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.OPTIMIZED FOR SSB.30 MHz.50 VOLTS.COMMON EMITTER.GOLD METALLIZATION.P 75 W MIN. WITH 14.0 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1733 TH513PIN CONNECTIONDESCRIPTIONThe SD1733 is a 50 V Class AB epitaxial siliconNPN planar transistor designed primarily for SSBand VHF communic
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .