TH513 Specs and Replacement
Type Designator: TH513
SMD Transistor Code: TH513
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 127 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 19
Package: SOT120
TH513 Substitution
- BJT ⓘ Cross-Reference Search
TH513 datasheet
SD1733 (TH513) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTIMIZED FOR SSB .30 MHz .50 VOLTS .COMMON EMITTER .GOLD METALLIZATION .P 75 W MIN. WITH 14.0 dB GAIN = OUT .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1733 TH513 PIN CONNECTION DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communic... See More ⇒
Detailed specifications: TFNA14, TFNH10, TG50, TG51, TG52, TG53, TG55, TH430, 13009, TH560, TH562, THA15, THA42TTD03, THA92TTD03, TIP110A, TIP112L-TN3, TIP35CW
Keywords - TH513 pdf specs
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