TH560 Specs and Replacement

Type Designator: TH560

SMD Transistor Code: SD1730

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 320 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT121

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TH560 datasheet

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TH560

SD1730 (TH560) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY Figure 1. Package OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD 30 dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4L FL (M174) epoxy sealed DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed prima... See More ⇒

Detailed specifications: TFNH10, TG50, TG51, TG52, TG53, TG55, TH430, TH513, 2N3906, TH562, THA15, THA42TTD03, THA92TTD03, TIP110A, TIP112L-TN3, TIP35CW, TIP36CW

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