All Transistors. TSD1858CH Datasheet

 

TSD1858CH Datasheet and Replacement


   Type Designator: TSD1858CH
   SMD Transistor Code: D1858
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO251
 

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TSD1858CH Datasheet (PDF)

 ..1. Size:344K  taiwansemi
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TSD1858CH

TSD1858 Low Vcesat NPN Transistor TO-251 Pin Definition: PRODUCT SUMMARY (IPAK) 1. Base 2. Collector BVCBO 180V 3. Emitter BVCEO 160V IC 1.5A VCE(SAT) 0.3V @ IC = 1A, IB = 100mA Features Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) Part No. Package Packing High BVCEO TSD1858CH C5G TO-251 75pcs / Tube Note: G denote for Hal

 9.1. Size:489K  truesemi
 tsd18n20m.pdf pdf_icon

TSD1858CH

TSD18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HS6014 | BCX28 | BD214B | TSD1664CY | 2N1654 | MM3007 | 2SC5618

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