TSD1858CH Transistor. Datasheet pdf. Equivalent
Type Designator: TSD1858CH
Marking Code: D1858
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO251
TSD1858CH Transistor Equivalent Substitute - Cross-Reference Search
TSD1858CH Datasheet (PDF)
1.1. tsd1858ch.pdf 
Size:344K _update
TSD1858 Low Vcesat NPN Transistor TO-251 Pin Definition: PRODUCT SUMMARY (IPAK) 1. Base 2. Collector BVCBO 180V 3. Emitter BVCEO 160V IC 1.5A VCE(SAT) 0.3V @ IC = 1A, IB = 100mA Features Ordering Information ● Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) Part No. Package Packing ● High BVCEO TSD1858CH C5G TO-251 75pcs / Tube Note: “G” denote for Hal
Datasheet: THA42TTD03 , THA92TTD03 , TIP110A , TIP112L-TN3 , TIP35CW , TIP36CW , TSD1664CY , TSD1760CP , 2N222 , TSD2098ACY , TSD2118CP , TSD2150A , TSD2444CX , TSD882CK , TSD882S , TSL13003 , TV9018NND03 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |