TSD2444CX Transistor. Datasheet pdf. Equivalent
Type Designator: TSD2444CX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT23
TSD2444CX Transistor Equivalent Substitute - Cross-Reference Search
TSD2444CX Datasheet (PDF)
1.1. tsd2444cx.pdf 
Size:333K _update
TSD2444 Low Vcesat NPN Transistor SOT-23 Pin Definition: PRODUCT SUMMARY 1. Base 2. Emitter BVCBO 40V 3. Collector BVCEO 25V IC 800mA VCE(SAT) 40mV @ IC / IB = 50 / 2.5mA Features Ordering Information ● Low VCE(SAT) Part No. Package Packing ● Excellent DC Current Gain Characteristics TSD2444CX RF SOT-23 3Kpcs / 7” Reel Structure ● Epitaxial Planar Type
Datasheet: TIP35CW , TIP36CW , TSD1664CY , TSD1760CP , TSD1858CH , TSD2098ACY , TSD2118CP , TSD2150A , S9013 , TSD882CK , TSD882S , TSL13003 , TV9018NND03 , TK2222ATTD03 , TK2907ATTD03 , TK3904LLD03 , TK3904NND03 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |