TSL13003 Transistor. Datasheet pdf. Equivalent
Type Designator: TSL13003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 21 pF
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO92
TSL13003 Transistor Equivalent Substitute - Cross-Reference Search
TSL13003 Datasheet (PDF)
1.1. tsl13003.pdf 
Size:596K _update
Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25ºC unless note
Datasheet: TSD1760CP , TSD1858CH , TSD2098ACY , TSD2118CP , TSD2150A , TSD2444CX , TSD882CK , TSD882S , 9012 , TV9018NND03 , TK2222ATTD03 , TK2907ATTD03 , TK3904LLD03 , TK3904NND03 , TK3906LLD03 , TK3906NND03 , TMBT3904 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |