TV9018NND03 Transistor. Datasheet pdf. Equivalent
Type Designator: TV9018NND03
Marking Code: J8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: WBFBP-03B
TV9018NND03 Transistor Equivalent Substitute - Cross-Reference Search
TV9018NND03 Datasheet (PDF)
1.1. tv9018nnd03.pdf 
Size:284K _update
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TV9018NND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE FEATURES 2. EMITTER High Current Gain Bandwidth Product fT=1.1 GHz (Typ) BACK 3. COLLECTOR APPLICATION AM/FM Amplifier, Local Oscillat
Datasheet: TSD1858CH , TSD2098ACY , TSD2118CP , TSD2150A , TSD2444CX , TSD882CK , TSD882S , TSL13003 , 431 , TK2222ATTD03 , TK2907ATTD03 , TK3904LLD03 , TK3904NND03 , TK3906LLD03 , TK3906NND03 , TMBT3904 , TMBT3906 .
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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |