TV9018NND03 Datasheet, Equivalent, Cross Reference Search
Type Designator: TV9018NND03
SMD Transistor Code: J8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: WBFBP-03B
TV9018NND03 Transistor Equivalent Substitute - Cross-Reference Search
TV9018NND03 Datasheet (PDF)
..1. Size:284K jiangsu
tv9018nnd03.pdf
tv9018nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TV9018NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE FEATURES 2. EMITTER High Current Gain Bandwidth Product fT=1.1 GHz (Typ) BACK 3. COLLECTOR APPLICATION AM/FM Amplifier, Local Oscillat
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
