All Transistors. TK3906NND03 Datasheet

 

TK3906NND03 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TK3906NND03
   SMD Transistor Code: 3N
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: WBFBP-03B

 TK3906NND03 Transistor Equivalent Substitute - Cross-Reference Search

   

TK3906NND03 Datasheet (PDF)

 ..1. Size:370K  jiangsu
tk3906nnd03.pdf

TK3906NND03
TK3906NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904NND03) BACK 3. COLLECTOR Ultra-Small Surf

 8.1. Size:93K  jiangsu
tk3906lld03.pdf

TK3906NND03
TK3906NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904LLD03) BACK 3. COLLECTOR Ultra-Small Surf

 9.1. Size:512K  jiangsu
tk3904led03.pdf

TK3906NND03
TK3906NND03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03E Plastic-Encapsulate Transistors TK3904LED03 TRANSISTORNPN WBFBP-03E DESCRIPTION NPN single switching transistor ultra small SMD plastic package FEATURE1. BASE Complementary to TK3906LED03 2. EMITTER Single General-Purpose Switching Transistor 3. COLLECTORAPPLICATION General-Purpose Switching and Ampl

 9.2. Size:91K  jiangsu
tk3904lld03.pdf

TK3906NND03
TK3906NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906LLD03) BACK Ultra-Small Surface Mount Pack

 9.3. Size:297K  jiangsu
tk3904nnd03.pdf

TK3906NND03
TK3906NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906NND03) BACK Ultra-Small Surface Mount Pack

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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