TRD236D Datasheet, Equivalent, Cross Reference Search
Type Designator: TRD236D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO252
TRD236D Transistor Equivalent Substitute - Cross-Reference Search
TRD236D Datasheet (PDF)
trd236d.pdf
TRD236DHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 Integrated antiparallel collector-emitter diode1ApplicationsTO-252 (DPAK) Electronic ballast for fluorescent lighting Electronic transf
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2025 | AC122Y | 2SD1628F | 2N2195 | MSD602RT1 | AC180VI | 2SD1711
History: 2SD2025 | AC122Y | 2SD1628F | 2N2195 | MSD602RT1 | AC180VI | 2SD1711
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050