TRD236D Specs and Replacement
Type Designator: TRD236D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO252
TRD236D Substitution
- BJT ⓘ Cross-Reference Search
TRD236D datasheet
TRD236D High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Integrated antiparallel collector-emitter diode 1 Applications TO-252 (DPAK) Electronic ballast for fluorescent lighting Electronic transf... See More ⇒
Detailed specifications: TK2907ATTD03, TK3904LLD03, TK3904NND03, TK3906LLD03, TK3906NND03, TMBT3904, TMBT3906, TRD136D, SS8050, TSC236CZ, TSC236CI, TSC2411CX, TSC4505CX, TSC5401CT, TSC5904CX, TSC5988CT, TSC873CT
Keywords - TRD236D pdf specs
TRD236D cross reference
TRD236D equivalent finder
TRD236D pdf lookup
TRD236D substitution
TRD236D replacement
