All Transistors. TRD236D Datasheet

 

TRD236D Datasheet and Replacement


   Type Designator: TRD236D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO252
 

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TRD236D Datasheet (PDF)

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TRD236D

TRD236DHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 Integrated antiparallel collector-emitter diode1ApplicationsTO-252 (DPAK) Electronic ballast for fluorescent lighting Electronic transf

Datasheet: TK2907ATTD03 , TK3904LLD03 , TK3904NND03 , TK3906LLD03 , TK3906NND03 , TMBT3904 , TMBT3906 , TRD136D , A1013 , TSC236CZ , TSC236CI , TSC2411CX , TSC4505CX , TSC5401CT , TSC5904CX , TSC5988CT , TSC873CT .

History: 2N4878 | BSV15-10 | BCX54-16

Keywords - TRD236D transistor datasheet

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