TSC966CT Specs and Replacement

Type Designator: TSC966CT

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO92

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TSC966CT datasheet

 8.1. Size:145K  taiwansemi

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TSC966CT

TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 Pin Definition Pin Definition PRODUCT SUMMARY 1. Emitter 1. Base 2. Collector 2. Collector BVCBO 600V 3. Base 3. Emitter BVCEO 400V IC 300mA VCE(SAT) 0.5V @ IC / IB = 50mA / 5mA Features Ordering Information High BVceo, BVcbo Part No. Package Packing High current gain TSC966CT B0 TO-92 1K... See More ⇒

Detailed specifications: TSC236CI, TSC2411CX, TSC4505CX, TSC5401CT, TSC5904CX, TSC5988CT, TSC873CT, TSC873CW, D880, TSC966CW, TSB1132CY, TSB1184ACP, TSB1184CP, TSB1386CY, TSB1412CP, TSB1424ACW, TSB1424CY

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