All Transistors. TSC966CT Datasheet

 

TSC966CT Datasheet and Replacement


   Type Designator: TSC966CT
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92
 

 TSC966CT Substitution

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TSC966CT Datasheet (PDF)

 8.1. Size:145K  taiwansemi
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TSC966CT

TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Base 2. Collector 2. Collector BVCBO 600V 3. Base 3. Emitter BVCEO 400V IC 300mA VCE(SAT) 0.5V @ IC / IB = 50mA / 5mA Features Ordering Information High BVceo, BVcbo Part No. Package Packing High current gain TSC966CT B0 TO-92 1K

Datasheet: TSC236CI , TSC2411CX , TSC4505CX , TSC5401CT , TSC5904CX , TSC5988CT , TSC873CT , TSC873CW , 2SD669A , TSC966CW , TSB1132CY , TSB1184ACP , TSB1184CP , TSB1386CY , TSB1412CP , TSB1424ACW , TSB1424CY .

History: BUX46B | MMUN2113LT1 | BC309C | H2N5551 | 2N6773 | 2N4132

Keywords - TSC966CT transistor datasheet

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