TSC10CT Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC10CT
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.96 W
Maximum Collector-Base Voltage |Vcb|: 980 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 21 pF
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO92
TSC10CT Transistor Equivalent Substitute - Cross-Reference Search
TSC10CT Datasheet (PDF)
..1. Size:201K taiwansemi
tsc10ct.pdf
tsc10ct.pdf
Preliminary TSC10 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 500V 3. Base BVCBO 980V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Pa
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD602
