2N6773 PDF Specs and Replacement
Type Designator: 2N6773
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
2N6773 Substitution
2N6773 PDF detailed specifications
2n6771 2n6772 2n6773.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide ... See More ⇒
2n6773.pdf
isc Silicon NPN Power Transistors 2N6773 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir... See More ⇒
2n6770 irf450.pdf
PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest S... See More ⇒
Detailed specifications: 2N6751 , 2N6752 , 2N6753 , 2N6754 , 2N676 , 2N677 , 2N6771 , 2N6772 , 2N5401 , 2N6774 , 2N6775 , 2N6776 , 2N677A , 2N677B , 2N677C , 2N678 , 2N678A .
History: 2N3906SC
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