All Transistors. TP9383 Datasheet

 

TP9383 Datasheet and Replacement


   Type Designator: TP9383
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 230 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 108 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: STYLE-500-4L-FLG
 

 TP9383 Substitution

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TP9383 Datasheet (PDF)

 ..1. Size:247K  hgsemi
 tp9383.pdf pdf_icon

TP9383

HG RF POWER TRANSISTORTP9383SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE 500 4L FLGThe HG TP9383 is a CommonEmitter Device Designed for FMBroadcast Transmitter Applications inthe 88 to 108 MHz Band.FEATURES INCLUDE:High Efficiency.. Gold Metallization. Emitter BallastingMAXIMUM RATINGSIC 16 AVCBO 60 VPDISS 230 W

 9.1. Size:14K  advanced-semi
 tp9380.pdf pdf_icon

TP9383

TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for PACKAGE STYLE .500 4L FLG Class C, FM Broadcast Applications up to 108 MHz. .112x45 LAC .125 NOM.E FULL RFEATURES:C Class C Operation B PG = 10 dB at 75 W/108 MHz BE Omnigold Metalization System E D F G HKJIMAXIMUM RATINGS MINIMUM MAXIMUM

Datasheet: TPT5609-A , TPT5609-B , TPT5609-C , TSC10CT , TSC114ENND03 , TSC114TNND03 , TSC114YNND03 , TSC1203ECM , 2SD718 , TP749 , TP3020A , TP5002 , TP5002S , TP7L10 , TP9012NND03 , TP9013NND03 , TP9014NND03 .

History: CS1251F | 2SA722

Keywords - TP9383 transistor datasheet

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