All Transistors. TP9015NND03 Datasheet

 

TP9015NND03 Datasheet and Replacement


   Type Designator: TP9015NND03
   SMD Transistor Code: M6
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: WBFBP-03B
 

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TP9015NND03 Datasheet (PDF)

 ..1. Size:305K  jiangsu
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TP9015NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

 9.1. Size:287K  jiangsu
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TP9015NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

 9.2. Size:340K  jiangsu
 tp9012nnd03.pdf pdf_icon

TP9015NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 9.3. Size:305K  jiangsu
 tp9013nnd03.pdf pdf_icon

TP9015NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

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Datasheet: TP749 , TP3020A , TP5002 , TP5002S , TP7L10 , TP9012NND03 , TP9013NND03 , TP9014NND03 , 2SD1047 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , NE02132 , NE02133 , NE02135 .

History: BUT50P | L14D1 | CHUMB9GP | 2SD772B | MMBTRC103SS | 2SD782 | 2SC6096-TD-H

Keywords - TP9015NND03 transistor datasheet

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 TP9015NND03 equivalent finder
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