NE02103 Datasheet and Replacement
Type Designator: NE02103
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO120
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NE02103 Datasheet (PDF)
ne02103.pdf
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ne02107.pdf
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ne02112.pdf
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ne02133.pdf
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