N0501S Datasheet, Equivalent, Cross Reference Search
Type Designator: N0501S
SMD Transistor Code: GM_GL_GK
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT23
N0501S Transistor Equivalent Substitute - Cross-Reference Search
N0501S Datasheet (PDF)
..1. Size:78K renesas
n0501s.pdf
n0501s.pdf
Data SheetN0501S R07DS0725EJ0100Rev.1.00NPN SILICON EPITAXIAL TRANSISTOR Mar 30, 2012FEATURES Complements to N0501R. VCEO = 50 V IC(DC) = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number Packing Package Name Package Code Mass [TYP.] N0501S-T1-AT Tape 3000p/reel SOT-23F PVSF0003ZA-A 0.0126gABSOLUTE MAXIM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
