NSVT65011MW6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVT65011MW6T1G
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
NSVT65011MW6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSVT65011MW6T1G Datasheet (PDF)
nsvt65011mw6t1g.pdf
NST65011MW6Dual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifiers; M
nsvt65010mw6t1g.pdf
NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
