NJT4030PT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJT4030PT3G
SMD Transistor Code: 4030P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
NJT4030PT3G Transistor Equivalent Substitute - Cross-Reference Search
NJT4030PT3G Datasheet (PDF)
njt4030p njv4030p.pdf
Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT
njt4030p-t.pdf
NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2
njt4030p-d.pdf
NJT4030PBipolar Power TransistorsPNP SiliconFeatures Collector --Emitter Sustaining Voltage --http://onsemi.comVCEO(sus) =40Vdc (Min) @IC =10mAdc High DC Current Gain --PNP TRANSISTORhFE = 200 (Min) @ IC =1.0 Adc= 100 (Min) @ IC =3.0 Adc3.0 AMPERES Low Collector --Emitter Saturation Voltage --40 VOLTS, 2.0 WATTSVCE(sat) = 0.200 Vdc (Max) @ IC =1.0 Adc= 0.5
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
