NJVMJD148T4G Datasheet and Replacement
Type Designator: NJVMJD148T4G
SMD Transistor Code: J148
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO252
NJVMJD148T4G Transistor Equivalent Substitute - Cross-Reference Search
NJVMJD148T4G Datasheet (PDF)
njvmjd148.pdf
MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @... See More ⇒
njvmjd112 njvmjd117.pdf
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas... See More ⇒
njvmjd122 njvmjd127.pdf
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements... See More ⇒
njvmjd128.pdf
MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo... See More ⇒
Datasheet: NSS40300DDR2G , NSS40300MDR2G , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G , NJVMJD128T4G , 2N2222A , NJVMJD210T4G , NJVMJD243T4G , NJVMJD253T4G , NJVMJD2955T4G , NJVMJD3055T4G , NJVMJD31CG , NJVMJD31CRLG , NJVMJD31CT4G .
History: BD2550 | BCW71R | 2N5294 | BCX54-10 | NB223EI | 2SC4839 | ET413
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History: BD2550 | BCW71R | 2N5294 | BCX54-10 | NB223EI | 2SC4839 | ET413
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