NJVMJD32CG Specs and Replacement
Type Designator: NJVMJD32CG
SMD Transistor Code: J32C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO252
NJVMJD32CG Substitution
- BJT ⓘ Cross-Reference Search
NJVMJD32CG datasheet
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf ![]()
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njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf ![]()
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S... See More ⇒
Detailed specifications: NJVMJD243T4G, NJVMJD253T4G, NJVMJD2955T4G, NJVMJD3055T4G, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G, MJE340, NJVMJD32CT4G, NJVMJD32T4G, NJVMJD340T4G, NJVMJD350T4G, NJVMJD41CT4G, NJVMJD42CRLG, NJVMJD42CT4G, NJVMJD44E3T4G
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History: 2SC3642
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