NSBA114EF3T5G Specs and Replacement
Type Designator: NSBA114EF3T5G
SMD Transistor Code: F
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SOT1123-3
NSBA114EF3T5G Substitution
- BJT ⓘ Cross-Reference Search
NSBA114EF3T5G datasheet
NSBA114EF3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors;... See More ⇒
NSBA114EF3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors;... See More ⇒
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digi... See More ⇒
NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor (3) (2) (1) contains a single transistor with a monolithic bias network consistin... See More ⇒
Detailed specifications: NJVMJD45H11G, NJVMJD45H11RLG, NJVMJD45H11T4G, NJVMJD47T4G, NJVMJD50T4G, NJVMJD6039T4G, NSBA114EDP6T5G, NSBA114EDXV6T1G, C3198, NSBA114TDP6T5G, NSBA114TDXV6T1G, NSBA114TDXV6T5G, NSBA114TF3T5G, NSBA114YDP6T5G, NSBA114YDXV6T1G, NSBA114YF3T5G, NST30010MXV6T1G
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