NSBA114EF3T5G Datasheet and Replacement
Type Designator: NSBA114EF3T5G
SMD Transistor Code: F
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT1123-3
NSBA114EF3T5G Substitution
NSBA114EF3T5G Datasheet (PDF)
nsba114ef3t5g.pdf

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;
nsba114ef3-d.pdf

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;
nsba114edxv.pdf

NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi
nsba114edp6.pdf

NSBA114EDP6T5G SeriesPreferred DevicesDual Digital Transistors(BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistor(3) (2) (1)contains a single transistor with a monolithic bias network consistin
Datasheet: NJVMJD45H11G , NJVMJD45H11RLG , NJVMJD45H11T4G , NJVMJD47T4G , NJVMJD50T4G , NJVMJD6039T4G , NSBA114EDP6T5G , NSBA114EDXV6T1G , 13005 , NSBA114TDP6T5G , NSBA114TDXV6T1G , NSBA114TDXV6T5G , NSBA114TF3T5G , NSBA114YDP6T5G , NSBA114YDXV6T1G , NSBA114YF3T5G , NST30010MXV6T1G .
History: BF824
Keywords - NSBA114EF3T5G transistor datasheet
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History: BF824



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