All Transistors. NSBA143EF3T5G Datasheet

 

NSBA143EF3T5G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSBA143EF3T5G
   SMD Transistor Code: A
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT1123-3

 NSBA143EF3T5G Transistor Equivalent Substitute - Cross-Reference Search

   

NSBA143EF3T5G Datasheet (PDF)

 4.1. Size:396K  onsemi
mun2132 mmun2132l mun5132 dta143ee dta143em3 nsba143ef3.pdf

NSBA143EF3T5G
NSBA143EF3T5G

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 4.2. Size:155K  onsemi
nsba143ef3.pdf

NSBA143EF3T5G
NSBA143EF3T5G

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

 6.1. Size:127K  onsemi
nsba143edxv6.pdf

NSBA143EF3T5G
NSBA143EF3T5G

MUN5132DW1,NSBA143EDXV6,NSBA143EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w

 6.2. Size:127K  onsemi
nsba143edp6.pdf

NSBA143EF3T5G
NSBA143EF3T5G

MUN5132DW1,NSBA143EDXV6,NSBA143EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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