NSBA143TDXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBA143TDXV6T1G
SMD Transistor Code: 0F
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT563
NSBA143TDXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSBA143TDXV6T1G Datasheet (PDF)
mun5116dw1 nsba143tdxv6.pdf
MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R
nsba143tdxv6.pdf
MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR
nsba143tf3.pdf
MUN2116, MMUN2116L,MUN5116, DTA143TE,DTA143TM3, NSBA143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
