All Transistors. NSBA143TDXV6T5G Datasheet

 

NSBA143TDXV6T5G Datasheet and Replacement


   Type Designator: NSBA143TDXV6T5G
   SMD Transistor Code: 0F
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT563
      - BJT Cross-Reference Search

   

NSBA143TDXV6T5G Datasheet (PDF)

 2.1. Size:195K  onsemi
 mun5116dw1 nsba143tdxv6.pdf pdf_icon

NSBA143TDXV6T5G

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R

 2.2. Size:132K  onsemi
 nsba143tdxv6.pdf pdf_icon

NSBA143TDXV6T5G

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR

 6.1. Size:151K  onsemi
 nsba143tf3.pdf pdf_icon

NSBA143TDXV6T5G

MUN2116, MMUN2116L,MUN5116, DTA143TE,DTA143TM3, NSBA143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

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Keywords - NSBA143TDXV6T5G transistor datasheet

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