NSS12501UW3T2G Specs and Replacement

Type Designator: NSS12501UW3T2G

SMD Transistor Code: VF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: WDFN3

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NSS12501UW3T2G datasheet

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NSS12501UW3T2G

NSS12501UW3T2G 12 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

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NSS12501UW3T2G

NSS12501UW3T2G 12 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

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NSS12501UW3T2G

NSS12500UW3T2G 12 V, 8.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor... See More ⇒

 7.2. Size:108K  onsemi

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NSS12501UW3T2G

NSS12500UW3T2G 12 V, 8.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor... See More ⇒

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Detailed specifications: NSVMMUN2212LT1G, NSVMMUN2217LT1G, NSVMMUN2230LT1G, NSVMMUN2232LT1G, NSVMMUN2232LT3G, NSVMMUN2233LT3G, NSVMMUN2235LT1G, NSS12500UW3T2G, NJW0281G, NSS12601CF8T1G, NSS1C200MZ4T1G, NSS1C200MZ4T3G, NSS1C201L, NSS1C201MZ4, NSS1C201MZ4T3G, NSS1C300E, NSS1C300ET4G

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