All Transistors. NSS1C201MZ4T3G Datasheet

 

NSS1C201MZ4T3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSS1C201MZ4T3G
   SMD Transistor Code: 1C201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223

 NSS1C201MZ4T3G Transistor Equivalent Substitute - Cross-Reference Search

   

NSS1C201MZ4T3G Datasheet (PDF)

 ..1. Size:125K  onsemi
nss1c201mz4t3g.pdf

NSS1C201MZ4T3G NSS1C201MZ4T3G

NSS1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 3.1. Size:109K  onsemi
nss1c201mz4.pdf

NSS1C201MZ4T3G NSS1C201MZ4T3G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 3.2. Size:104K  onsemi
nss1c201mz4 nsv1c201mz4.pdf

NSS1C201MZ4T3G NSS1C201MZ4T3G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 6.1. Size:76K  onsemi
nss1c201l.pdf

NSS1C201MZ4T3G NSS1C201MZ4T3G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

 6.2. Size:137K  onsemi
nss1c201l nsv1c201l.pdf

NSS1C201MZ4T3G NSS1C201MZ4T3G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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