NSS1C300E Specs and Replacement

Type Designator: NSS1C300E

SMD Transistor Code: 1C30E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO252

 NSS1C300E Substitution

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NSS1C300E datasheet

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NSS1C300E

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typi... See More ⇒

 0.1. Size:164K  onsemi

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NSS1C300E

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical... See More ⇒

 7.1. Size:160K  onsemi

 nss1c301et4g.pdf pdf_icon

NSS1C300E

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical... See More ⇒

 7.2. Size:114K  onsemi

 nss1c301e.pdf pdf_icon

NSS1C300E

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi... See More ⇒

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Detailed specifications: NSS12500UW3T2G, NSS12501UW3T2G, NSS12601CF8T1G, NSS1C200MZ4T1G, NSS1C200MZ4T3G, NSS1C201L, NSS1C201MZ4, NSS1C201MZ4T3G, BC556, NSS1C300ET4G, NSS1C301E, NSS1C301ET4G, NSVMMBT2222ATT1G, NSVMMBT2907AWT1G, NSVMMBT5087LT1G, NSVMMBT5087LT3G, NSVMMBT5088LT3G

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