2N697S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N697S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
2N697S Transistor Equivalent Substitute - Cross-Reference Search
2N697S Datasheet (PDF)
2n6975 2n6976 2n6977 2n6978.pdf
2N6975, 2N6976,S E M I C O N D U C T O R2N6977, 2N69785A, 400V and 500V N-Channel IGBTsApril 1995April 1995Features PackageJEDEC TO-204AA 5A, 400V and 500VBOTTOM VIEW VCE(ON) 2VCOLLECTOREMITTER(FLANGE) TFI 1s, 0.5s Low On-State VoltageGATE Fast Switching Speeds High Input ImpedanceTerminal DiagramApplicationsN-CHANNEL ENHANCEMENT M
2n697.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N 697TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCERCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5VPDPower Dissipation @ Ta=25C 600
2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
