NSVBT2222ADW1T1G Datasheet and Replacement
Type Designator: NSVBT2222ADW1T1G
SMD Transistor Code: 1P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
NSVBT2222ADW1T1G Substitution
NSVBT2222ADW1T1G Datasheet (PDF)
nsvbt2222adw1t1g.pdf

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM
mbt2222adw1 nsvbt2222adw1.pdf

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM
Datasheet: NSBC115TDP6T5G , NSBC115TF3 , NSBC115TF3T5G , NSBC115TPDP6 , NSBC115TPDP6T5G , NSVBCX17LT1G , NSVBSP19AT1G , NSVBSS63LT1G , 2N4401 , NSVEMC2DXV5T1G , NSVEMD4DXV6T5G , NSVEMX1DXV6T1G , NSVMBT3904DW1T3G , NSBC123EDXV6 , NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G .
History: NSBA143EDXV6T1G | RT1P434C
Keywords - NSVBT2222ADW1T1G transistor datasheet
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History: NSBA143EDXV6T1G | RT1P434C



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