NSVBT2222ADW1T1G Specs and Replacement
Type Designator: NSVBT2222ADW1T1G
SMD Transistor Code: 1P
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT363
NSVBT2222ADW1T1G Substitution
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NSVBT2222ADW1T1G datasheet
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM... See More ⇒
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM... See More ⇒
Detailed specifications: NSBC115TDP6T5G, NSBC115TF3, NSBC115TF3T5G, NSBC115TPDP6, NSBC115TPDP6T5G, NSVBCX17LT1G, NSVBSP19AT1G, NSVBSS63LT1G, 2SB817, NSVEMC2DXV5T1G, NSVEMD4DXV6T5G, NSVEMX1DXV6T1G, NSVMBT3904DW1T3G, NSBC123EDXV6, NSBC123EDXV6T1G, NSBC123EF3, NSBC123EF3T5G
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