All Transistors. NSBC123JDXV6T1G Datasheet

 

NSBC123JDXV6T1G Datasheet and Replacement


   Type Designator: NSBC123JDXV6T1G
   SMD Transistor Code: 7M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT563
 

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NSBC123JDXV6T1G Datasheet (PDF)

 2.1. Size:127K  onsemi
 nsbc123jdxv6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 5.1. Size:128K  onsemi
 nsbc123jdp6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 6.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

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Datasheet: NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , NSBC123JDP6T5G , NSBC123JDXV6 , D882P , NSBC123JDXV6T5G , NSBC123JF3 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 , NSBC123JPDXV6T1G , NSBC123JPDXV6T5G .

History: SQ1893F | 2SC1204 | KT668V

Keywords - NSBC123JDXV6T1G transistor datasheet

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