NSBC123JDXV6T1G Todos los transistores

 

NSBC123JDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC123JDXV6T1G
   Código: 7M
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563
 

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Principales características: NSBC123JDXV6T1G

 2.1. Size:127K  onsemi
 nsbc123jdxv6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

 5.1. Size:128K  onsemi
 nsbc123jdp6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

 6.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JDXV6T1G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

MOSTRAR MÁS

Otros transistores... NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , NSBC123JDP6T5G , NSBC123JDXV6 , 2SC2240 , NSBC123JDXV6T5G , NSBC123JF3 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 , NSBC123JPDXV6T1G , NSBC123JPDXV6T5G .

 

 
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