NSVBC846BM3T5G Specs and Replacement

Type Designator: NSVBC846BM3T5G

SMD Transistor Code: 1B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.27 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT723

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NSVBC846BM3T5G datasheet

 ..1. Size:100K  onsemi

nsvbc846bm3t5g.pdf pdf_icon

NSVBC846BM3T5G

BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI... See More ⇒

 ..2. Size:96K  onsemi

bc846bm3t5g nsvbc846bm3t5g.pdf pdf_icon

NSVBC846BM3T5G

BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI... See More ⇒

 7.1. Size:111K  onsemi

bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf pdf_icon

NSVBC846BM3T5G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-... See More ⇒

 7.2. Size:109K  onsemi

nsvbc848bwt1g.pdf pdf_icon

NSVBC846BM3T5G

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC... See More ⇒

Detailed specifications: NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G, NSVBC817-16LT1G, NSVBC818-40LT1G, BC327, NSVBC847BDW1T2G, NSVBC847BLT3G, NSVBC847BTT1G, NSVBC848BWT1G, NSVBC848CDW1T1G, NSVBC848CLT1G, NSVBC850BLT1G, NSVBC850CLT1G

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