NSVBC848CLT1G Specs and Replacement
Type Designator: NSVBC848CLT1G
SMD Transistor Code: 1L
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 420
Package: SOT23
NSVBC848CLT1G Substitution
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NSVBC848CLT1G datasheet
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-... See More ⇒
Detailed specifications: NSVBC817-16LT1G, NSVBC818-40LT1G, NSVBC846BM3T5G, NSVBC847BDW1T2G, NSVBC847BLT3G, NSVBC847BTT1G, NSVBC848BWT1G, NSVBC848CDW1T1G, BD335, NSVBC850BLT1G, NSVBC850CLT1G, NSVBC857BLT3G, NSVBC857BTT1G, NSVBC857CWT1G, NSVBC858BLT1G, NSVBC858CLT1G, NSS20101J
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