NSS40301MDR2G Specs and Replacement
Type Designator: NSS40301MDR2G
SMD Transistor Code: N40301
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOIC8
NSS40301MDR2G Substitution
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NSS40301MDR2G datasheet
DATA SHEET www.onsemi.com Dual Matched 40 V, 6.0 A, 40 VOLTS 6.0 AMPS Low VCE(sat) NPN Transistor NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 44 mW NSS40301MDR2G These transistors are part of the onsemi e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices COLLECTOR COLLECTOR highly matched in all parameters, including ultra low saturation... See More ⇒
NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. Typical applications ... See More ⇒
NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where NPN TRANSISTOR affordable effic... See More ⇒
NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where NPN TRANSISTOR affordable effic... See More ⇒
Detailed specifications: NSVBC858BLT1G, NSVBC858CLT1G, NSS20101J, NSS20200LT1G, NSS20201LT1G, NSS20201MR6, NSS40300MZ4T1G, NSS40300MZ4T3G, SS8050, NSS40301MZ4T1G, NSS40301MZ4T3G, NSS40302PDR2G, NSS40500UW3T2G, NSS40501UW3T2G, NSS40600CF8T1G, NSS40601CF8T1G, NSS60100DMT
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