NSTB60BDW1T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSTB60BDW1T1G
SMD Transistor Code: 71
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.26
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Collector Capacitance (Cc): 3.5
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT363
NSTB60BDW1T1G Transistor Equivalent Substitute - Cross-Reference Search
NSTB60BDW1T1G Datasheet (PDF)
nstb60bdw1t1g.pdf
NSTB60BDW1PNP General Purpose andNPN Bias ResistorTransistor Combination Simplifies Circuit Designwww.onsemi.com Reduces Board Space Reduces Component Count(3) (2) (1) Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating - Human Body Model: Class 1BESD Rating - Machine Model: Class B Q2 NSV Prefix for Automotive and Other Applications Requiring
nstb60bdw1t1.pdf
NSTB60BDW1T1PNP General Purpose andNPN Bias ResistorTransistor Combination Simplifies Circuit Designhttp://onsemi.com Reduces Board Space Reduces Component Count(3) (2) (1) Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating Human Body Model: Class 1BQ2ESD Rating Machine Model: Class BQ1MAXIMUM RATINGSR2(TA = 25C unless otherwise
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