NSV40300MDR2G Datasheet. Specs and Replacement
Type Designator: NSV40300MDR2G 📄📄
SMD Transistor Code: P40300
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Package: SOIC8
📄📄 Copy
NSV40300MDR2G Substitution
- BJT ⓘ Cross-Reference Search
NSV40300MDR2G datasheet
NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A... See More ⇒
nss40300mdr2g nsv40300mdr2g.pdf ![]()
NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A... See More ⇒
NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic... See More ⇒
NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important... See More ⇒
Detailed specifications: NSVBC114EPDXV6T1G, NSVBC114YDXV6T1G, NSVBC124EDXV6T1G, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G, NSV40200UW6T1G, NSV40201LT1G, MJE350, NSV40300MZ4T1G, NSV40301MDR2G, NSV40301MZ4T1G, NSV40302PDR2G, NSBC144EDP6, NSBC144EDXV6, NSBC144EF3, NSBC144EPDP6
Keywords - NSV40300MDR2G pdf specs
NSV40300MDR2G cross reference
NSV40300MDR2G equivalent finder
NSV40300MDR2G pdf lookup
NSV40300MDR2G substitution
NSV40300MDR2G replacement
BJT Parameters and How They Relate
History: 2N3582 | 2SA1056 | BFX55 | 2N369 | BLS3135-65
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488 | irfb438 | mj21193g | irf3710 pinout






