2N706B-51 Specs and Replacement
Type Designator: 2N706B-51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO51
2N706B-51 Substitution
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2N706B-51 datasheet
Detailed specifications: 2N706, 2N706-46, 2N706-51, 2N706A, 2N706A-46, 2N706A-51, 2N706B, 2N706B-46, 2SB817, 2N706C, 2N706C-46, 2N706C-51, 2N707, 2N707A, 2N708, 2N708-46, 2N708-51
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