A1276 Datasheet. Specs and Replacement
Type Designator: A1276 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220
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A1276 datasheet
A1276 PNP silicon APPLICATION General Purpos Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V TO-220 1 Emitter-base voltage VEBO -5 V 1.Base 2.Collector 3.Emitter Collector current IC -3 A Collector Power Dissipation PC 1.2 10 W Junction Tem... See More ⇒
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JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL P... See More ⇒
isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
Detailed specifications: A1255, A1266, A1267, A1267S, A1270, A1271, A1273, A1273A, 2SB817, A1296, A1297, A1298, A1300, A1309, A1313, A1317, A1317S
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BJT Parameters and How They Relate
History: A1320 | FJPF5021 | 2N3738 | AUY33X | STA485A | MMUN2114LT1 | 2N357A
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