A940 Datasheet, Equivalent, Cross Reference Search

A940PNP silicon APPLICATIONLow Noise Audio Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage -150 VVCBOCollector-emitter voltage -150 VVCEOTO-2201Emitter-base voltage -5 VVEBO1.Base 2.Collector 3.EmitterCollector current -1.5 AICBase current -0.5 AIBC

KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 150 VVCEO Collector-Emitter Voltage - 150 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 1.5 AIB Base Curr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).DSA9402Silicon PNP epitaxial planar typeFor general amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free package Pin Name 1. Base Packaging 2

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSA940, CSC2073CSA940 PNP PLASTIC POWER TRANSISTORCSC2073 NPN PLASTIC POWER TRANSISTORPower Amplifier Applications and Vertical Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col

2SA940(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA940 APPLICATIONS Vertical Deflection Output Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073A(3DA2073A) Features: Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -1

TRANSISTOR A940C MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -150V High switching speed PC 25W RoHS RoHS product C2073 Complementary to C2073 APPLICATIONS High frequency switch power supply Commonly power amplifier

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073(3DA2073) Features: Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -150 V

2SA940PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3 PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

2SA940T1TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon PNP Power Transistor KSA940TUDESCRIPTIONCollector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min)DC Current Gain: hFE= 40-140@ IC= -0.5AComplement to Type KSC2073TUMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output app

isc Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE