A940
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A940
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 35
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar A940
A940
Datasheet (PDF)
..1. Size:280K fgx
a940.pdf 

A940 PNP silicon APPLICATION Low Noise Audio Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage -150 V VCBO Collector-emitter voltage -150 V VCEO TO-220 1 Emitter-base voltage -5 V VEBO 1.Base 2.Collector 3.Emitter Collector current -1.5 A IC Base current -0.5 A IB C
0.2. Size:59K fairchild semi
ksa940.pdf 

KSA940 Vertical Deflection Output Power Amplifier Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 150 V VCEO Collector-Emitter Voltage - 150 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 1.5 A IB Base Curr
0.3. Size:243K onsemi
ksa940.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.4. Size:434K panasonic
dsa9402.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DSA9402 Silicon PNP epitaxial planar type For general amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free package Pin Name 1. Base Packaging 2
0.5. Size:204K cdil
csa940 csc2073.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA940, CSC2073 CSA940 PNP PLASTIC POWER TRANSISTOR CSC2073 NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.6
0.6. Size:396K jiangsu
2sa940.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15
0.7. Size:197K jmnic
2sa940.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col
0.8. Size:223K lge
2sa940.pdf 

2SA940(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co
0.9. Size:139K shantou-huashan
ha940.pdf 

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA940 APPLICATIONS Vertical Deflection Output Power Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation
0.10. Size:227K china
2sa940a 3ca940a.pdf 

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073A(3DA2073A) Features Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -1
0.11. Size:286K feihonltd
a940c.pdf 

TRANSISTOR A940C MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -150V High switching speed PC 25W RoHS RoHS product C2073 Complementary to C2073 APPLICATIONS High frequency switch power supply Commonly power amplifier
0.12. Size:375K lzg
2sa940 3ca940.pdf 

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073(3DA2073) Features Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -150 V
0.13. Size:1966K jsmsemi
2sa940.pdf 

2SA940 PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou
0.14. Size:969K cn evvo
2sa940.pdf 

2SA940 Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu
0.15. Size:1295K cn sps
2sa940t1tl.pdf 

2SA940T1TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -
0.16. Size:422K cn sptech
2sa940.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
0.17. Size:190K inchange semiconductor
ksa940tu.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor KSA940TU DESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= -150V(Min) DC Current Gain hFE= 40-140@ IC= -0.5A Complement to Type KSC2073TU Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier , vertical output app
0.18. Size:201K inchange semiconductor
2sa940.pdf 

isc Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE
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