All Transistors. A950 Datasheet

 

A950 Datasheet, Equivalent, Cross Reference Search


   Type Designator: A950
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 19 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 A950 Transistor Equivalent Substitute - Cross-Reference Search

   

A950 Datasheet (PDF)

 ..1. Size:227K  fgx
a950.pdf

A950

A950 PNP silicon APPLICATIONAudio Power Amplifier Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -800 mACollector Power Dissipation PC 600 mWJunction Temperature TJ 150Storage Tempe

 0.1. Size:192K  toshiba
2sa950.pdf

A950
A950

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO

 0.2. Size:98K  vishay
sia950dj.pdf

A950
A950

New ProductSiA950DJVishay SiliconixDual N-Channel 190-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) LITTLE FOOT Power MOSFET3.8 at VGS = 4.5 V 0.95 New Thermally Enhanced PowerPAK190 4.2 at VGS = 2.5 V 0.9 1.4 nC SC-70 Package- Small Footprint Area17 at VGS = 1.8 V 0.3- Low On-Resi

 0.3. Size:256K  mcc
2sa950-o-y.pdf

A950
A950

MCCTM Micro Commercial Components2SA950-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA950-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant.

 0.4. Size:338K  secos
2sa950.pdf

A950
A950

2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 EmitterCollectorBase JCLASSIFICATION OF hFE (1) A DMillimeterREF. Min. Max.Product-Rank 2SA950-O 2SA950-YA 4.40 4.70

 0.5. Size:401K  cdil
csa950.pdf

A950
A950

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA950TO-92Plastic PackageBCEComplementary CSC2120Audio Power Amplifier Application.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 30 VVCBOCollector Base Voltage 35

 0.6. Size:500K  jiangsu
2sa950.pdf

A950
A950

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA950 TRANSISTOR (PNP)TO-92 FEATURES 1W Output Applications1.EMITTER Complementary to 2SC21202. COLLECTOR3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

 0.7. Size:188K  lge
2sa950.pdf

A950
A950

2SA950(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collecto

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1461

 

 
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