A950
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A950
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120
MHz
Capacitancia de salida (Cc): 19
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar A950
A950
Datasheet (PDF)
..1. Size:227K fgx
a950.pdf 
A950 PNP silicon APPLICATIONAudio Power Amplifier Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -800 mACollector Power Dissipation PC 600 mWJunction Temperature TJ 150Storage Tempe
0.1. Size:192K toshiba
2sa950.pdf
2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO
0.2. Size:98K vishay
sia950dj.pdf
New ProductSiA950DJVishay SiliconixDual N-Channel 190-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) LITTLE FOOT Power MOSFET3.8 at VGS = 4.5 V 0.95 New Thermally Enhanced PowerPAK190 4.2 at VGS = 2.5 V 0.9 1.4 nC SC-70 Package- Small Footprint Area17 at VGS = 1.8 V 0.3- Low On-Resi
0.3. Size:256K mcc
2sa950-o-y.pdf
MCCTM Micro Commercial Components2SA950-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA950-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant.
0.4. Size:338K secos
2sa950.pdf
2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 EmitterCollectorBase JCLASSIFICATION OF hFE (1) A DMillimeterREF. Min. Max.Product-Rank 2SA950-O 2SA950-YA 4.40 4.70
0.5. Size:401K cdil
csa950.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA950TO-92Plastic PackageBCEComplementary CSC2120Audio Power Amplifier Application.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 30 VVCBOCollector Base Voltage 35
0.6. Size:500K jiangsu
2sa950.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA950 TRANSISTOR (PNP)TO-92 FEATURES 1W Output Applications1.EMITTER Complementary to 2SC21202. COLLECTOR3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code
0.7. Size:188K lge
2sa950.pdf
2SA950(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collecto
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