All Transistors. SK3715 Datasheet

 

SK3715 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SK3715
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

 SK3715 Transistor Equivalent Substitute - Cross-Reference Search

   

SK3715 Datasheet (PDF)

 ..1. Size:70K  njs
sk3715.pdf

SK3715

 0.1. Size:96K  nec
2sk3715.pdf

SK3715
SK3715

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3715SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3715 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)

 0.2. Size:279K  inchange semiconductor
2sk3715.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3715FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.1. Size:758K  toshiba
2sk371.pdf

SK3715
SK3715

2SK371 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK371 For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) High breakdown voltage: VGDS = -40 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 m

 9.2. Size:207K  renesas
2sk3714.pdf

SK3715
SK3715

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:248K  renesas
2sk3712-z.pdf

SK3715
SK3715

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:239K  nec
2sk3716-z.pdf

SK3715
SK3715

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:358K  sanken-ele
2sk3710.pdf

SK3715
SK3715

http://www.sanken-ele.co.jp SANKEN ELECTRIC May. 2011 Features Package Low on-state resistance 5.0m VGS=10V TO220S Built-in gate protection diode SMD PKG Applications DCDC converter Mortar drive Internal Equivalent Circuit Key Specifications V(BR)DSS = 60V (ID=100uA) (2) RDS(ON) = 5m max (ID=35A / VGS=10V)

 9.6. Size:307K  sanken-ele
2sk3711.pdf

SK3715
SK3715

60V N -ch MOSFET 2SK3711 December 2005 PackageTO3P Features Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed Applications Electric power steering High current switching Equivalent circuit D (2) G (1)S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to So

 9.7. Size:43K  kexin
2sk3713.pdf

SK3715

SMD Type MOSFETMOS Field Effect Transistor2SK3713TO-263Unit: mm+0.24.57-0.2+0.1Features1.27-0.1Super high VGS(off): VGS(off) = 3.8 to 5.8 VLow Crss: Crss = 6.5 pF TYP.Low QG: QG = 25 nC TYP.+0.10.1max1.27-0.1Low on-state resistance:+0.10.81-0.1RDS(on) =0.83 MAX. (VGS =10 V, ID =5A)2.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22Drain3 Source

 9.8. Size:354K  inchange semiconductor
2sk3712.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3712FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 580m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 9.9. Size:287K  inchange semiconductor
2sk3716-z.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3716-ZFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 9.10. Size:278K  inchange semiconductor
2sk3714.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3714FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.11. Size:255K  inchange semiconductor
2sk3710.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3710FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

 9.12. Size:355K  inchange semiconductor
2sk3716.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3716FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.13. Size:259K  inchange semiconductor
2sk3711.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3711FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

 9.14. Size:287K  inchange semiconductor
2sk3712-z.pdf

SK3715
SK3715

isc N-Channel MOSFET Transistor 2SK3712-ZFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 580m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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