All Transistors. H772 Datasheet

 

H772 Datasheet and Replacement


   Type Designator: H772
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(TYP) MHz
   Collector Capacitance (Cc): 55 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
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H772 Datasheet (PDF)

 ..1. Size:817K  shantou-huashan
 h772.pdf pdf_icon

H772

P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H772 APPLICATIONS Audio Frequency Power Amplifier , Switching Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollect

 0.1. Size:102K  chenmko
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H772

CHENMKO ENTERPRISE CO.,LTDCH772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (DPAK)DPAK* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate)..094 (2.38).086 (2.19)* High s

 0.2. Size:224K  semihow
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H772

KSH772KSH772 SEMIHOW REV.A2,Mar 2008KSH7722KSH772Audio Frequency Power AmplifierAudio Frequency Power Amplifier- Low Speed Switching- Complement to KSH8823 AmperesPNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1 WattsTO-126CHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collector3. BaseCollector-Base Voltage VCBO

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DTA144VUA | 2N5321W | 2N5853 | H1836 | 3DD5G | 2N615 | DTL1642

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