All Transistors. HS669A Datasheet

 

HS669A Datasheet and Replacement


   Type Designator: HS669A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140(TYP) MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 HS669A Substitution

   - BJT ⓘ Cross-Reference Search

   

HS669A Datasheet (PDF)

 ..1. Size:111K  shantou-huashan
 hs669a.pdf pdf_icon

HS669A

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS669A APPLICATIONS Low Frequancy Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: HP32CF , HP41C , HP42C , HP50 , HS2236 , HS600K , HS631K , HS649A , D965 , HS772 , HS882 , HSBD135 , HSBD136 , HSBD137 , HSBD138 , HSBD139 , HSBD140 .

History: 2N399 | 2N2164 | 2SA1529

Keywords - HS669A transistor datasheet

 HS669A cross reference
 HS669A equivalent finder
 HS669A lookup
 HS669A substitution
 HS669A replacement

 

 
Back to Top

 


 
.